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  RU40E80L n-channel advanced power mosfet symbol rating unit v dss 40 v gss 16 t j 175 c t stg -55 to 175 c i s t c =25c 80 a i dp t c =25c 320 a t c =25c 80 t c =100c 62 t c =25c 96 t c =100c 48 r jc 1.55 c/w r ja 100 c/w e as 256 mj ruichips semiconductor co., ltd rev. a? apr., 2013 1 www.ruichips.com pin description features ? 40v/80a, r ds (on) =4.5m(typ.)@v gs =10v r ds (on) =5.5m(typ.)@v gs =4.5v ? low r ds (on) ? super high dense cell design ? esd protected ? 100% avalanche tested ? lead free and green devices available (rohs compliant) applications absolute maximum ratings to252 n-channel mosfet parameter common ratings (t c =25c unless otherwise noted) ? switching applications drain-source voltage v gate-source voltage maximum junction temperature storage temperature range thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed diode continuous forward current 300s pulse drain current tested continuous drain current(v gs =10v) maximum power dissipation mounted on large heat sink i d a p d w thermal resistance-junction to ambient g s d g s d
RU40E80L min. typ. max. bv dss drain-source breakdown voltage 40 v 1 t j =125c 30 v gs(th) gate threshold voltage 1.3 2.5 v i gss gate leakage current 10 a 4.5 7 m 5.5 11 m v sd diode forward voltage 1.2 v t rr reverse recovery time 25 ns q rr reverse recovery charge 22 c r g gate resistance 1.2 c iss input capacitance 1620 c oss output capacitance 295 c rss reverse transfer capacitance 85 t d(on) turn-on delay time 15 t r turn-on rise time 55 t d(off) turn-off delay time 42 t f turn-off fall time 13 q g total gate charge 42 q gs gate-source charge 11 q gd gate-drain charge 15 notes: ruichips semiconductor co., ltd rev. a? apr., 2013 2 www.ruichips.com r ds(on) drain-source on-state resistance v gs =10v, i ds =80a electrical characteristics (t c =25c unless otherwise noted) v dd =20v,i ds =40a, v gen =10v,r g =4.7 i sd =80a, v gs =0v i sd =40a, dl sd /dt=100a/s v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =20v, frequency=1.0mhz pf dynamic characteristics v gs =16v, v ds =0v v gs =4.5v, i ds =64a diode characteristics v ds =v gs , i ds =250a static characteristics v ds =32v, v gs =10v, i ds =40a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. the package limitation current is 60a. limited by t jmax , i as =32a, v dd =32v, r g =50 , starting t j =25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. gate charge characteristics nc ns symbol parameter test condition RU40E80L unit v gs =0v, i ds =250a i dss zero gate voltage drain current v ds =40v, v gs =0v a
RU40E80L device marking package packaging quantity reel size tape width RU40E80L RU40E80L to252 tape&reel 2500 13'' 16mm ruichips semiconductor co., ltd rev. a? apr., 2013 3 www.ruichips.com ordering and marking information
RU40E80L ruichips semiconductor co., ltd rev. a? apr., 2013 4 www.ruichips.com typical characteristics 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v limited by package 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current ids=80a 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 1 10 100 1000 0.1 1 10 100 1000 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.001 0.01 0.1 1 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 1.55 c/w
RU40E80L ruichips semiconductor co., ltd rev. a? apr., 2013 5 www.ruichips.com typical characteristics 0 10 20 30 40 50 60 70 80 90 100 1 2 3 4 5 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 2v 3v 3.5v 4v vgs=9,10 v 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 10v 4.5v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i d =80a t j =25 c rds(on)=4.5m 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =150 c 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 1 10 100 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds=32v ids=40a
RU40E80L ruichips semiconductor co., ltd rev. a? apr., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU40E80L ruichips semiconductor co., ltd rev. a? apr., 2013 7 www.ruichips.com package information to252 l2 1 1 1 c a1 l a l3 l1 e1 d1 b e h d l4 e b3 2 min nom max min nom max a 2.200 2.290 2.380 0.087 0.090 0.094 a1 0.000 0.100 0.000 0.004 b 0.720 0.785 0.850 0.028 0.031 0.033 b3 5.230 5.345 5.460 0.206 0.210 0.215 c 0.470 0.525 0.580 0.019 0.021 0.023 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 5.30 ref 0.20 ref e 6.500 6.600 6.700 0.256 0.260 0.264 e1 4.700 4.810 4.920 0.185 0.189 0.194 e h 9.900 10.100 10.300 0.390 0.398 0.406 l 1.400 1.550 1.700 0.055 0.061 0.067 l1 2.743 ref 0.108 ref l2 l3 0.900 1.075 1.250 0.035 0.042 0.049 l4 0.600 0.800 1.000 0.024 0.031 0.039 0 8 0 8 1 5 7 9 5 7 9 2 5 7 9 5 7 9 0.510 bsc 0.020 bsc symbol mm inch 2.28 ref 0.09 ref
RU40E80L ruichips semiconductor co., ltd rev. a? apr., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com


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